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| 6MBI10S-120 IGBT MODULE ( S series) 1200V / 10A 6 in one-package Features * Compact package * P.C.board mount * Low VCE(sat) IGBT Modules Applications * Inverter for motor drive * AC and DC servo drive amplifier * Uninterruptible power supply * Industrial machines, such as welding machines Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless otherwise specified) Item Symbol Collector-Emitter voltage VCES Gate-Emitter voltage VGES Collector Continuous Tc=25C IC current Tc=80C 1ms Tc=25C IC pulse Tc=80C -IC 1ms -IC pulse Max. power dissipation (1 device) PC Operating temperature Tj Storage temperature Tstg Isolation voltage Vis Screw torque Mounting *1 *1 : Recommendable value : 2.5 to 3.5 N*m (M5) Rating 1200 20 15 10 30 20 10 20 75 +150 -40 to +125 AC 2500 (1min.) 3.5 Unit V V A A A A W C C V N*m Equivalent circuit 13 (P ) 1(G u ) 5(G v) 9(G w ) 2(E u) 16 (U) 6(E v ) 15 (V ) 10 (E w ) 14 (W ) 3(G x) 7(G y) 11 (G z) 4(E x ) 17 (N) 8(E y ) 12 (E z ) Electrical characteristics (Tj=25C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr tr(i) toff tf VF trr Characteristics Min. Typ. - - - - 5.5 7.2 - 2.3 - 2.8 - 1200 - 250 - 220 - 0.35 - 0.25 - 0.1 - 0.45 - 0.08 - 2.5 - 2.0 - - Conditions Max. 1.0 0.2 8.5 2.6 - - - - 1.2 0.6 - 1.0 0.3 3.3 - 0.35 VGE=0V, VCE=1200V VCE=0V, VGE=20V VCE=20V, IC=10mA Tj=25C VGE=15V, IC=10A Tj=125C VGE=0V VCE=10V f=1MHz VCC=600V IC=10A VGE=15V RG=120ohm Tj=25C Tj=125C IF=10A IF=10A, VGE=0V Unit mA A V V pF s Turn-off time Diode forward on voltage Reverse recovery time V s Thermal resistance characteristics Item Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 Characteristics Min. Typ. - - - - - 0.05 Conditions Max. 1.67 2.78 - IGBT FWD the base to cooling fin C/W C/W C/W Unit Thermal resistance *2 : This is the value which is defined mounting on the additional cooling fin with thermal compound 6MBI10S-120 Characteristics IGBT Modules Collector current vs. Collector-Emitter voltage Tj= 25 C (typ.) 25 25 o Collector current vs. Collector-Emitter voltage Tj= 125 C (typ.) o VGE= 20V 15V 20 12V 20 VGE= 20V 15V 12V Collector current : Ic [ A ] 15 10V 10 Collector current : Ic [ A ] 15 10V 10 5 5 8V 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 25 10 Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25 C (typ.) o Tj= 25 C 20 o Tj= 125 C 8 Collector - Emitter voltage : VCE [ V ] o Collector current : Ic [ A ] 15 6 10 4 Ic= 20A 2 Ic= 10A Ic= 5A 5 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25 5000 o Dynamic Gate charge (typ.) Vcc=600V, Ic=10A, Tj= 25 1000 o C C 25 800 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] 20 Gate - Emitter voltage : VGE [ V ] 1000 Cies 600 15 500 400 10 200 5 100 Coes Cres 50 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ] 0 0 20 40 60 80 Gate charge : Qg [ nC ] 0 100 6MBI10S-120 IGBT Modules Switching time vs. Collector current (typ.) Vcc=600V,VGE=15V, Rg=120,Tj=25oC 1000 1000 Switching time vs. Collector current (typ.) Vcc=600V,VGE=15V, Rg=120,Tj=125oC toff 500 toff Switching time : ton, tr, toff, tf [ nsec ] 500 Switching time : ton, tr, toff, tf [ nsec ] ton ton tr tr tf 100 100 tf 50 0 5 10 Collector current : Ic [ A ] 15 20 50 0 5 10 Collector current : Ic [ A ] 15 20 Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=10A, VGE=15V, Tj= 25C 5000 3 Switching loss vs. Collector current (typ.) Vcc=600V,VGE=15V, Rg=120,Tj=25oC ton toff Switching time : ton, tr, toff, tf [ nsec ] tr 1000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Eon(125 C) o 2 Eon(25 C) o 500 Eoff(125 C) 1 Eoff(25 C) Err(125 C) o o o 100 tf Err(25 C) o 50 50 100 500 Gate resistance : Rg [ ] 1000 2000 0 0 5 10 Collector current : Ic [ A ] 15 20 8 Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=10A, VGE=15V, Tj= 125C Reverse bias safe operating area 25 +VGE=15V, -VGE<15V, Rg>120,Tj<125oC = = = Eon Switching loss : Eon, Eoff, Err [ mJ/pulse ] 6 Collector current : Ic [ A ] Eoff Err 0 50 100 500 Gate resistance : Rg [ ] 1000 2000 20 15 4 10 2 5 0 0 200 400 600 800 1000 1200 1400 Collector - Emitter voltage : VCE [ V ] 6MBI10S-120 IGBT Modules Forward current vs. Forward on voltage (typ.) 25 300 Reverse recovery characteristics (typ.) Vcc=600V,VGE=15V, Rg=120 Tj=125 C 20 o Tj=25 C 100 o trr(125 C) o trr(25 C) Reverse recovery time : trr [ nsec ] Reverse recovery current : Irr [ A ] 50 Forward current : IF [ A ] o 15 10 10 Irr(125 C) o Irr(25 C) o 5 0 0 1 2 Forward on voltage : VF [ V ] 3 4 1 0 5 10 Forward current : IF [ A ] 15 20 Transient thermal resistance 5 FWD IGBT Thermal resistanse : Rth(j-c) [ C/W ] 1 o 0.1 M623 0.01 Pulse width : Pw [ sec ] 0.1 1 0.05 0.001 Outline Drawings, mm 107.51 4-o6.10.3 2-o5.50.3 16.02 17 930.3 15.24 15.24 15.24 15.24 13 69.60.3 27.60.3 320.3 41.91 451 + 0.5 0 o2.50.1 1.5 930.3 A A 1.150.2 o2.10.1 Section A-A o0.4 0.80.2 12 11 1 3.81 3.50.5 1.50.3 16.02 11.43 11.43 11.43 11.43 11.43 10.2 20.51 2.50.3 171 6.50.5 Shows theory dimensions 6 |
Price & Availability of 6MBI10S-120
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